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HSDL-4271
High-Performance T-13/4 (5mm) AlGaAs Infrared (940nm) Lamp
Datasheet
Description The HSDL-4271 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-13/4 (5mm) package.
5.0 0.2
Features * High Power AlGaAs LED Technology * 940 nm Wavelength * T-13/4 Package * Low Cost * Low Forward Voltage: 1.2V at 20mA Applications * Industrial Infrared Equipments and Applications (Smoke Detectors etc) * Consumer Electronics (Infrared Remote Controller etc)
8.7 0.2
1.14 0.2
* Infrared spotlight for cameras * Discrete Interrupters * Infrared source for optical counters and card readers
5.8 0.2
Part Number
31.6 min.
0.7 max. 2.54
Lead Form Straight
Shipping Option Bulk
HSDL-4271
CATHODE FLAT
1.0 min.
0.50 0.1
Absolute Maximum Ratings at 25C
Parameter Peak Forward Current Forward Current Power Dissipation Reverse Voltage Storage Temperature LED Junction Temperature Lead Soldering Temperature
Notes: 1. Derate as shown in Figure 6.
Symbol IFPK IFDC PDISS VR TS TJ
Minimum 5 -40
Maximum 350 100 200 100 110 260 for 5 sec
Unit mA mA mW V C C C
Reference Duty cycle = 20% period = 200us
IR=100uA
Recommended Operating Conditions
Parameter Operating Temperature Symbol TO Min -40 Max 85 Unit C Reference
Electrical Characteristics at 25C
Parameter Forward Voltage Forward Voltage Temperature Coefficient Series Resistance Diode Capacitance Thermal Resistance, Junction to Ambient Symbol VF V/T RS CO Rja Min. Typ. 1.2 1.4 -1.0 2 25 310 Max. 1.5 1.7 Unit V mV/C Ohms pF C/W Condition IFDC=20mA IFDC=100mA IFDC=100mA IFDC=100mA VR=0V, f=1MHz Reference Figure 2 Figure 3 Figure 4
Optical Characteristics at 25C
Parameter Radiant On-Axis Intensity Radiant On-Axis Intensity Temperature Coefficient Viewing Angle Peak Wavelength Spectral Width Optical Rise and Fall Time Symbol IE IE/T 21/2 pk tr/tf Min. 25 Typ. 50 -0.3 -0.5 30 940 50 1.3 Max. Unit mW/Sr %/C nm nm us ILED=20mA ILED=100mA Condition ILED=100mA ILED=100mA Figure 7 Figure 1 Figure 1 Reference Figure 4
2
1.0 Relative Radiant Intensity 0.8 0.6 0.4 0.2 0 800 900 Wavelength (nm) Figure 1. Relative Radiant Intensity vs. Wavelength 1000
DC Forward Current vs. Forward Voltage at Temp=25C
IFDC - DC Forward Current,, - (mA)
100
10
1 0 0.5 1 VF - Forward Voltage - (V) 1.5
Figure 2. DC Forward Current vs. Forward Voltage
IFPK - Peak Forward Current - (mA)
Peak Forward Current vs. Forward Voltage at Ta=25C
100
IE - Radiant Intensity - (mW/Sr)
1000
Radiant Intensity, IE vs. Forward Current, IF at Ta=25 C 60
40
10
20
1 0.0 0.5 1.0 1.5 VF - Forward Voltage - (V) 2.0
0 20 50 IF - Forward Current - (mA) 100
Figure 3. Peak Forward Current vs. Forward Voltage
Figure 4. Radiant Intensity vs. DC Forward Current
Average VF versus Temperature 1.6
VF - Average - (Volts)
Maximum allowable DC current vs. ambient temperature 110 100 90 80 70 60 50 40 30 20 10 0 0 20
IDC MAX - Maximum DC Current - (mA)
1.5 If=100mA 1.4 1.3 If=20mA 1.2 1.1 1.0 -40 -25 0 25 50 70 Temperature - (C) 85 100
RJA=300C/
40 60 80 TA - Ambient Temperature - (C)
100
Figure 5. Forward Voltage vs. Ambient Temperature
Figure 6: DC Forward Current vs. Ambient Temperature Derated Based on TJMAX =110C
3
Radiation Profile 1.2 1.0 0.8 0.6 0.4 0.2 0 -100 -50 0 Angle () 50 100
Figure 7. Radiant Intensity vs. Angular Displacement
For company and product information, please go to our web site: WWW.liteon.com or
http://optodatabook.liteon.com/databook/databook.aspx
Data subject to change. Copyright (c) 2007 Lite-On Technology Corporation. All rights reserved.
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